SPP Teclorogy

RVP Ace

RVP Ace

The RVP Ace vertical batch furnace is a flexible platform for diffusion, oxidation and LPCVD processes with leading productivity and low cost of ownership (CoO) on 200 and 300 mm wafers. The RVP Ace improves upon previous version process modules and integrates with updated control architecture. This tool improves upon your specific engineering requirements.

Feature

High-Throughput Thermal Processing with Advanced Wafer Size Flexibility

RVP Ace provides high-throughput thermal processing with precise temperature control from 100°C to 1200°C. Optimized gas flow and a low-oxygen load lock ensure consistent, repeatable results for 200mm and 300mm wafers.

Process Flexibility

-Runs 200 and 300mm simultaneously with no hardware changes
-Compatible with bonded, thin and bowed substrates
-Advanced across-flow chamber design for enhanced process control
-Uses proven process modules

Low Cost of Ownership

-Modular architecture for fast move in and startup
-Improved automation reliability
-Minimum calibration and Preventive maintenance
-Dual-boat configuration eliminates wafer load/unload time
-In-situ clean capability reduces CoO by up to 50%
-Fast temperature ramp/cool option enables up to 30% reduction in process time

Capability

Supported Thermal Processes for Advanced Semiconductor Applications

Designed for thermal oxidation, silicon nitride, and ALD, RVP Ace delivers stable, repeatable results for advanced batch processing on 200mm and 300mm wafers.

  • Wet/dry thermal oxide
  • Radical oxidation
  • Silicon Nitride (Stoichiometric and low stress)
  • TEOS, SiH₄ and DCS-based SiO₂
  • Doped (P, As, B) and un-doped polysilicon
  • Atomic Layer Deposition
  • Anneal and Cure : 100 to >1200°C
  • ONO and ALD Al₂O₃

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      **We do not accept any sales proposals via our website.