Power devices, especially wide-bandgap semiconductors like SiC (Silicon Carbide), are revolutionizing the way we manage power in electric vehicles (EVs), renewable energy systems, industrial equipment, and data centers. These components enable faster switching speeds, higher voltage endurance, and greater energy efficiency than traditional silicon-based devices. As demand for power-efficient systems continues to surge, the need for reliable, scalable, and precise semiconductor fabrication solutions grows accordingly.

SiC-based power devices offer high performance, but their manufacturing presents unique technical difficulties. Some of the key challenges include:

• Hard material processing:

  SiC’s extreme hardness and chemical resistance make it difficult to etch using standard plasma techniques. Specialized dry etching methods are essential to achieve precise patterning without substrate damage.

• Thick film deposition:

  Power devices often require thick dielectric layers (e.g., SiO₂, SiN) for isolation and protection. These layers must exhibit excellent uniformity, step coverage, and low defectivity.

• Thermal sensitivity:

  Excess heat during processing can degrade wafer integrity and impact device reliability. Controlled low-temperature processes are vital for maintaining uniformity and reducing thermal stress.

• High aspect ratio structures:

  Deep trenches and isolation features require highly anisotropic etching with excellent sidewall control and minimal roughness.

• Yield and reliability:

  To meet volume demands, processes must be repeatable, scalable, and resistant to defect generation or contamination.