Etching
Engineered for MEMS release using anhydrous HF to achieve uniform, stiction-free oxide removal.
SPT’s sacrificial layer etching system is optimized for MEMS release, enabling uniform and stiction-free removal of silicon dioxide using anhydrous HF. With high selectivity and stable process control, it supports reliable fabrication of complex MEMS structures.
Features
Supports oxide removal in MEMS structures with aluminum, without corrosion or damage—ideal for CMOS-compatible designs.
Enables precise sacrificial etching with extended undercut lengths, supporting both micron-scale features and millimeter-range cavities.
Uses vapor-phase etching to eliminate liquid waste and reduce tool downtime, offering stable performance with low environmental impact.
Delivers precise control over etch depth and selectivity between oxide and structural layers, ensuring process repeatability for MEMS devices.
Performance
SPT’s sacrificial layer etching system ensures precise and stiction-free release of complex MEMS structures.
From IR bolometers to SOI-based oscillators, our tools support diverse applications with high uniformity and selectivity.
Infrared Bolometer Structure
Cantilever Structure
SOI Wafer BOX Layer Release
Silicon Oscillator Structure
(Courtesy of SiTime)
Specifications
Designed specifically for oxide sacrificial layer removal in MEMS devices. Provides stable, repeatable performance with a proven chamber and vapor delivery design.
Vetelgeuse
Wafer size (mm)
200
Platform
VPX
Etching Speed
Medium
Substrates
SiO2
Application
MEMS
VPX
Intended Use
Small Volume
Number of Chambers
3
Cassette Transfer Robot
Vacuum
Robot Motion
3-Axis
Number of Cassette Stations
1
