SPP Teclorogy

Etching

Si DRIE

High-precision Si DRIE systems for deep silicon etching with excellent anisotropy and uniformity. Engineered for MEMS, power devices, and advanced semiconductor applications.

Predeus, Proxion

SPT offers two Si DRIE systems—Predeus and Proxion—designed for high-aspect-ratio deep silicon etching. Both platforms deliver stable, repeatable performance with excellent uniformity and process control, supporting a wide range of MEMS and advanced packaging applications.

Applications:

  • MEMS Devices
  • Inkjet Printer Heads
  • Through-Silicon Vias (TSVs)
  • Power Semiconductor Devices
  • Optical Devices

Features

Why Choose SPT for High-Precision Si DRIE

Unmatched Etch Rate and Selectivity in Si DRIE

SPT’s Si DRIE systems deliver industry-leading etch rates and selectivity while maintaining vertical profiles, low sidewall roughness, and minimal CD loss.

Extensive Process Library for Diverse Etch Profiles

Our systems support a wide range of deep silicon etching shapes through a robust process library, enabling fast recipe development and consistent results.

Compatible with Advanced Semiconductor Applications

Ideal for power MOSFETs, TSV formation on 200 mm and 300 mm wafers, and other advanced device architectures requiring deep, high-aspect-ratio features.

Flexible System Configurations from R&D to Mass Production

From compact vacuum load-lock tools to fully integrated cluster systems, SPT offers scalable platforms for both pilot and high-volume Si DRIE production.

Performance

Si DRIE Performance for High-Aspect-Ratio, Speed, and TSV Etching Precision

SPT’s Si DRIE systems demonstrate exceptional deep silicon etching performance across a wide range of structures. Whether optimizing for high aspect ratio, maintaining vertical sidewalls, achieving fast etch rates, or forming precise TSVs, our platforms deliver the uniformity and process control required for advanced semiconductor applications.

High-Aspect-Ratio Etching

Cylindrical Structure Etching

High-Speed Etching

Through-Silicon Via (TSV) Etching

Specifications

Flexible Si DRIE System Architecture: Configure Your Process Module and Platform

SPT’s Si DRIE systems offer unparalleled configurability through a modular approach. Customers can select from a range of process modules and system platforms to match specific production needs—whether for MEMS R&D or high-volume TSV fabrication.

Process Module

  • Predeus

  • Proxion

  • Wafer size (mm)

  • 200

  • 200

  • Platform

  • APX, DPX, VPX, CPX

  • APX, DPX, VPX, CPX

  • Etching Rate

  • Moderate

  • High

  • Substrates

  • Si

  • Si

  • Application

  • MEMS Gyroscope, MEMS Accelerometer

  • MEMS Microphone, Inkjet Printhead Manufacturing

Platform

  • APX

  • DPX

  • VPX

  • CPX

  • Intended Use

  • R&D

  • Prototype

  • Small Volume

  • Mass Production

  • Number of Chambers

  • 1

  • 2

  • 3

  • 4

  • Cassette Transfer Robot

  • Atmospheric

  • Vacuum

  • Vacuum

  • Robot Motion

  • 2-Axis

  • 2-Axis

  • 3-Axis

  • 3-Axis

  • Number of Cassette Stations

  • 0

  • 1

  • 1

  • 2

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      **We do not accept any sales proposals via our website.