PECVD
SPT’s PECVD system is designed for reliable deposition of thick oxide and low-stress silicon nitride in advanced MEMS and semiconductor applications.
SPT’s plasma-enhanced chemical vapor deposition (PECVD) system delivers high-quality silicon oxide and silicon nitride films with low stress, excellent uniformity, and reliable step coverage.
Designed for MEMS, optical coatings, and passivation films across a wide range of thicknesses.
Features
Enables fast deposition of thick SiO₂ layers for MEMS and optical waveguide applications, without cracks or voids.
Deposits low-temperature silicon oxide with high conformity on narrow, high-aspect-ratio TSV features.
Ideal for passivation of compound semiconductors, delivering dense silicon nitride films with minimal hydrogen.
Forms high-uniformity silicon nitride films with ultra-low stress for critical membrane applications.
Offered in vacuum load-lock and cluster tool formats to support a wide range of production needs.
Performance
SPT’s PECVD system delivers thick oxides, low-stress SiN, and conformal films for demanding MEMS and TSV structures.
Get the results that matter—with proven reliability and process control.
Void-Free Oxide Fill for TSV Structures
Thick Silicon Oxide Film Deposition
Low-Stress SiN Deposition
(Courtesy of Cambridge Univ.)
Conformal Oxide Deposition over Aluminum Interconnects
Specifications
SPT’s PECVD systems offer flexible configurations to meet diverse film thickness, material, and device requirements. Ideal for both R&D and production, with stable oxide and nitride deposition across applications.
Cetus
Capella
Wafer size (mm)
200
200
Platform
APX, DPX, VPX, CPX
APX, DPX, VPX, CPX
Process Temperature
Moderate
≤100°C
Deposition Materials
SiO2, SiN, SiON, SiC
SiO2, SiN
APX
DPX
VPX
CPX
Intended Use
R&D
Prototype
Small Volume
Mass Production
Number of Chambers
1
2
3
4
Cassette Transfer Robot
—
Atmospheric
Vacuum
Vacuum
Robot Motion
2-Axis
2-Axis
3-Axis
3-Axis
Number of Cassette Stations
0
2
1
2
